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| savantic semiconductor product specification silicon npn power transistors 2SD1110 d escription with to-3pfa package complement to type 2sb849 wide area of safe operation applications for use in low frequency power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (t c =25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD1110 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 120 v v ce (sat) collector-emitter saturation voltage i c =5a ;i b =0.5a 2.0 v v be (sat) base-emitter saturation voltage i c =5a ;i b =0.5a 2.0 v i cbo collector cut-off current v cb =120v; i e =0 50 a i ebo emitter cut-off current v eb =6v; i c =0 50 a h fe-1 dc current gain i c =20ma ; v ce =5v 20 h fe -2 dc current gain i c =1a ; v ce =5v 40 200 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 190 pf f t transition frequency i c =0.2a ; v ce =5v 15 mhz savantic semiconductor product specification 3 silicon npn power transistors 2SD1110 package outline fig.2 outline dimensions (unindicated tolerance: 0.30mm) |
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